Sinoceram Technology(Zhengzhou)Co.,ltd
telephone：0371-56900628
mailbox：sinoceram@qq.com
address：Dengfeng city of henan province industrial concentration area jade Beijing road
Products Introduction：96% Al2O3 ceramic substrates，lasered substrates and stamped substrates.
Applications of Material ：
The company produces high performance Al2O3 ceramic substrates with international advanced technologies. Our products have been widely used in the fields of telecommunication, automotive engineering, direct bonding copper (DBC), printer, LED lights etc, and heat diffusing boards of electronic components. We can produce various products with different sizes and shapes according to customer requirements.
Characteristics of 96% Al2O3 ceramic substrates：
High thermal conductivity
Good thermal shock resistance
Good surface quality, flat surface
High dielectric strength , low dielectric constant and dielectric loss
Good mechanical hardness
Steady physical and chemical property, anti-erosion
Good stability，good wresting properties, excellent precision in size
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项目
Characteristic
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测试条件
Test condition
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单位
Unit
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合格
Qualified
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优级
Fine
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外观
Color
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白色 致密
White dense
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白色 致密
White dense
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尺寸规格 mm
Size
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可根据客户要求制作各种尺寸规格(最大尺寸100*290）
Any size (max :100*290）
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尺寸公差
Length tolerances
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±0.7%
（Min：0.13mm）
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±0.5%
（Min：0.1mm）
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基片厚度 mm
Thickness
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0.38/0.5/0.635/0.76/1.0可根据客户定做0.38-1.2任意厚度
0.38/0.5/0.635/0.76/1.0Any thickness between 0.38 and 1.2
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厚度公差
Thickness tolerances
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±10%
（Min：0.05mm）
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±7%
（Min：0.05mm）
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翘曲度
Camber
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≤0.5%
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≤0.3%
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单晶粒度
Grain size
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μm
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3~5
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3~5
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表面粗糙度
Surface Roughness
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Ra
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μm
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0.2~0.5
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0.2~0.4
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密度
Density
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g/cm3
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≥3.70
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≥3.72
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物理性能
Physical properties
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抗弯强度
Flexural strength
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3点抗弯
Three point
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MPa
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≥300
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≥330
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维氏硬度
Hardness
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负荷 4.9
Loaded 4.9
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GPa
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≥14
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≥15
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吸水率
Water absorption
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%
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0
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0
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热性能
Thermal properties
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热导率
Thermal conductivity
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25℃
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W(m*k)
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≥21
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≥24
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热膨胀系数
thermal expansion
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25-500℃
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10-6mm/℃
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6.6~7.5
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6.6~7.5
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25-800℃
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6.6~7.9
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6.6~7.9
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抗热震性
Thermal shock resistance
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850℃
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次
time
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≥6
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比热
Specific heat
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J/(kg*K)
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880
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电性能
Electrical property
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介电常数
Dielectric constant
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1MHz/25℃
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9.4±0.3
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介电损耗
Dielectric loss
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1MHz/25℃
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×10-4
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≤3
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体积电阻率
Volume resistivity
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25℃
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Ω*cm
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＞1014
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500℃
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＞1010
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700℃
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＞109
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击穿电压
Breakdown voltage
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KV/mm
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＞12
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＞12
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